Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET.

Formulation of accurate yet computationally efficient surface potential equation (SPE) is the fundamental step toward developing compact models for low effective mass channel quantum well MOSFETs. In this paper, we propose a new SPE for such devices considering multisubband electron occupancy and oxide thickness asymmetry. Unlike the previous attempts, here, we adopt purely physical modeling approaches (such as without mixing the solutions from finite and infinite potential wells or using any empirical model parameter), while preserving the mathematical complexity almost at the same level. Gate capacitances calculated from the proposed SPE are shown to be in good agreement with numerical device simulation for wide range of channel thickness, effective mass, oxide thickness asymmetry, and bias voltages. [ABSTRACT FROM AUTHOR]