Controllable cracking behavior in Si/Si0.70Ge0.30/Si heterostructure by tuning the H+ implantation energy.

Controllable cracking behaviors are realized in Si with a buried B doped Si_0.70Ge_0.30 interlayer by tuning the Hþ projected ranges using the traditional H implantation technique. When the projected range is shallower (deeper) than the depth of the buried Si_0.70Ge_0.30 layer, cracking occurs at the interface between the top Si layer (bottom handle Si wafer) and the Si_0.70Ge_0.30 interlayer, thus resulting in the formation of continuous sharp crack confined at the Si_0.70Ge_0.30/Si interfaces. For the case that the H-ion projected range is located at the B-doped Si_0.70Ge_0.30 buried interlayer, continuous cracking is observed along the interlayer, which is similar to the conventional ion-cut method. We attribute these controlled cracking behaviors to the B doped Si_0.70Ge_0.30 interlayer, which holds a large amount of B impurities and compressive strain, and H ions can be trapped and confined at the interfaces or within the interlayer (depended on projected ranges) to facilitate the formation of cracks. [ABSTRACT FROM AUTHOR]