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High-precision PTAT current source based on the Meijer cell.

Authors :
Carvalhaes-Dias, P.
Guimarães, H. L.
Siqueira Dias, J. A.
Source :
International Journal of Electronics; Dec2017, Vol. 104 Issue 12, p2099-2110, 12p
Publication Year :
2017

Abstract

Proportional to absolute temperature (PTAT) current sources are one of the most important building blocks in analogue circuit design. An important PTAT current source is the Meijer all-NPN cross-quad circuit, where the PTAT output current does not present a strong dependence on the bias current and requires only four matched transistors to be realised, being adequate to be implemented with discrete circuits. In this paper, we present a technique that improves the performance of the Meijer cross-quad PTAT current source and minimises the deviations from the ideal behaviour by simply adding two transistors and adjusting the cell bias voltage. Simulated results in the -40 C to 85°C temperature range show that the errors were reduced by two orders of magnitude by using the novel technique, and a maximum non-linearity of 0.44 ppm/°C was obtained. A prototype of the circuit was built using the LM3046 transistor array, and a maximum deviation from the PTAT ideal current of only 0.06% was measured in 0–80°C, while in the conventional PTAT circuit an error of 0.81% was measured. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00207217
Volume :
104
Issue :
12
Database :
Complementary Index
Journal :
International Journal of Electronics
Publication Type :
Academic Journal
Accession number :
124584723
Full Text :
https://doi.org/10.1080/00207217.2017.1335796