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Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform.
- Source :
- IEEE Electron Device Letters; Sep2017, Vol. 38 Issue 9, p1282-1285, 4p
- Publication Year :
- 2017
-
Abstract
- GaN-based digital integrated circuits (ICs) are realized on a 6-inch GaN-on-Si power high-electron-mobility transistor (HEMT) platform by monolithic integration of enhancement/depletion-mode HEMTs using a 0.5- \mu \textm gate technology. A direct-coupled FET logic inverter and a 101-stage ring oscillator are fabricated and characterized. The inverter exhibits a large input voltage swing, wide noise margin, and high temperature stability, while the ring oscillator features a small propagation delay of 0.1 ns/stage under a supply voltage of 4 V. These digital ICs can operate properly up to at least 200 °C and show great potential for GaN smart power IC applications. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 38
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 124835197
- Full Text :
- https://doi.org/10.1109/LED.2017.2725908