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Synthesis of Superconductor-Topological Insulator Hybrid Nanoribbon Structures.

Authors :
Schönherr, Piet
Zhang, Fengyu
Srot, Vesna
van Aken, Peter
Hesjedal, Thorsten
Source :
NANO; Aug2017, Vol. 12 Issue 8, p-1, 7p
Publication Year :
2017

Abstract

Superconductors in proximity to topological insulators (TIs) have the potential to unlock exotic quantum phenomena, such as Majorana fermions. Quasi-one-dimensional structures are particularly suited to host these quantum states. Despite the growth of TI nanostructures being relatively straightforward, the in situ synthesis of superconductor-TI structures has been challenging. Here, we present a systematic study of the growth of the s-wave superconductor Sn on the TI Bi<subscript>2</subscript>Te<subscript>3</subscript> by physical vapor transport. If Sn does not enter the Bi<subscript>2</subscript>Te<subscript>3</subscript> lattice as a dopant, two types of structures are formed: Sn nanoparticles, that cover Bi<subscript>2</subscript>Te<subscript>3</subscript> plates and belts in a cloud-like shape, and thin Sn layers on Bi<subscript>2</subscript>Te<subscript>3</subscript> plates, that appear in puddle-like recessions. These heterostructures have potential applications as novel quantum devices. The in-situ synthesis of superconductor-topological insulator (TI) heterostructures has been challenging. Here, for the first time, a study of the growth of the s-wave superconductor Sn on the TI Bi<subscript>2</subscript>Te<subscript>3</subscript> by physical vapor transport was presented. Three different growth scenarios were observed: (1) Sn-decorated Bi<subscript>2</subscript>Te<subscript>3</subscript>, (2) local Sn-rich areas on Bi<subscript>2</subscript>Te<subscript>3</subscript> plates, and (3) Sn-doped Bi<subscript>2</subscript>Te<subscript>3</subscript>. The different growth regimes are controlled by the Sn precursor quantity, carrier gas flux, and growth time. Each type has its specific application potentials. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
17932920
Volume :
12
Issue :
8
Database :
Complementary Index
Journal :
NANO
Publication Type :
Academic Journal
Accession number :
124894292
Full Text :
https://doi.org/10.1142/S1793292017500953