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Ambipolar spin diffusion in p-type GaAs: A case where spin diffuses more than charge.
- Source :
- Journal of Applied Physics; 2017, Vol. 122 Issue 9, p1-8, 8p, 2 Charts, 8 Graphs
- Publication Year :
- 2017
-
Abstract
- We investigate the diffusion of charge and spin at 15K in p-type GaAs, combining transientgrating and energy-resolved microluminescence measurements to cover a broad range of photoelectron density. At very low optical power, in a unipolar nondegenerate regime, charge and spin diffuse at the same rate, implying that the spin-drag effects are negligible. Upon increasing the photoelectron concentration up to about 10<superscript>16</superscript> cm<superscript>-3</superscript>, the charge diffusion constant decreases because of ambipolar electrostatic interactions with the slower-diffusing holes while the spin diffusion constant is reduced only weakly by the ambipolar interaction. A further increase in the excitation power causes increases in both the charge and spin diffusion constants as a consequence of the Pauli principle since the photoelectron gas becomes degenerate. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 122
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 125062350
- Full Text :
- https://doi.org/10.1063/1.4985831