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Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs x Sb1-x Buffer Layers.
- Source :
- Chinese Physics Letters; Jan2017, Vol. 34 Issue 1, p1-1, 1p
- Publication Year :
- 2017
-
Abstract
- We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAs<subscript>x</subscript>Sb buffer layers. Optimization of GaAs<subscript>x</subscript>Sb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAs<subscript>x</subscript>Sb layers are found to be 420°C and 0.5 μm, respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67 nm over 2 × 2 μm<superscript>2</superscript> area are achieved as a 250 nm GaSb film is grown under optimized conditions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 34
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 125540833
- Full Text :
- https://doi.org/10.1088/0256-307X/34/1/018101