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Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes.
- Source :
- IEEE Photonics Technology Letters; 9/1/2017, Vol. 29 Issue 17, p1447-1450, 4p
- Publication Year :
- 2017
-
Abstract
- The nature of charge transport in GaN-based light-emitting diodes (LEDs) under reverse biases still remains elusive as the bias- and temperature-dependent characteristics of the current can hardly be formulated using a single transport mechanism. In this letter, based on numerical fitting, we develop a combined tunneling-hopping transport model to describe the complete electrical characteristics of the reverse leakage current in InGaN/GaN blue LEDs. This model depicts that the current behaviors are majorly limited by the charge transport process through the depletion region near the neutral n-side, where electrons at the valance band are ready to tunnel into the unoccupied localized gap states in neighborhood near the electron quasi-Fermi level ( E\mathrm {fn} ), followed by variable-range hopping or nearest-neighbor hopping via these localized states along a relatively constant E\mathrm {fn} , depending on temperature. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 10411135
- Volume :
- 29
- Issue :
- 17
- Database :
- Complementary Index
- Journal :
- IEEE Photonics Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 125755135
- Full Text :
- https://doi.org/10.1109/LPT.2017.2724143