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Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs.
- Source :
- IEEE Transactions on Electron Devices; Sep2017, Vol. 64 Issue 9, p3734-3739, 6p
- Publication Year :
- 2017
-
Abstract
- This paper reports on the impact of soft- and hard-switching conditions on the dynamic ON-resistance of AlGaN/GaN high-electron mobility transistors. For this study, we used a special double pulse setup, which controls the overlapping of the drain and gate waveforms (thus inducing soft and hard switching), while measuring the corresponding impact on the ON-resistance, drain current, and electroluminescence (EL). The results demonstrate that the analyzed devices do not suffer from dynamic R {\mathrm{\scriptscriptstyle ON}} increase when they are submitted to soft switching up to V{\text {DS}}= 600 V. On the contrary, hard-switching conditions lead to a measurable increase in the dynamic ON-resistance (dynamic- R \mathrm{\scriptscriptstyle ON}) . The increase in dynamic R \mathrm{\scriptscriptstyle ON} induced by hard switching is ascribed to hot-electrons effects: during each switching event, the electrons in the channel are accelerated by the high electric field and subsequently trapped in the AlGaN/GaN heterostructure or at the surface. This hypothesis is supported by the following results: 1) the increase in R \mathrm{\scriptscriptstyle ON} is correlated with the EL signal measured under hard-switching conditions and 2) the impact of hard switching on dynamic R \mathrm{\scriptscriptstyle ON} becomes weaker at high-temperature levels, as the average energy of hot electrons decreases due to the increase scattering with the lattice. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 125755770
- Full Text :
- https://doi.org/10.1109/TED.2017.2728785