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A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs.
- Source :
- IEEE Transactions on Electron Devices; Oct2017, Vol. 64 Issue 10, p4346-4353, 8p
- Publication Year :
- 2017
-
Abstract
- The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-magnetic tunnel junctions (MTJs) implemented in Verilog-A to assure easy integration with electrical circuit simulators. It takes into account the effects of voltage-dependent perpendicular magnetic anisotropy, temperature-dependent parameters, thermal heating/cooling, MTJ process variations, and the spin-torque asymmetry of the Slonczewski spin-polarization function in the switching process. This translates into a comprehensive modeling that was adopted to investigate the writing performance under voltage scaling of a $256\times256$ STT- magnetic random access memory array implemented at three different technology nodes. Obtained results show that scaling from 30- to 20-nm node allows a write energy saving of about 43%, while the supply voltage that assures the minimum-energy write operation increases. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 125755804
- Full Text :
- https://doi.org/10.1109/TED.2017.2734967