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Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source.
- Source :
- Nanotechnology; 11/10/2017, Vol. 28 Issue 45, p1-1, 1p
- Publication Year :
- 2017
-
Abstract
- We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe<subscript>2</subscript> thin films. The as-grown MoSe<subscript>2</subscript> thin films were characterized using transmission electron microscopy, energy dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence (PL), reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm<superscript>−1</superscript> was identified. Results from Raman spectroscopy, PL, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe<subscript>2</subscript> could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element. [ABSTRACT FROM AUTHOR]
- Subjects :
- EPITAXY
THIN films
TRANSMISSION electron microscopy
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 28
- Issue :
- 45
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 125792173
- Full Text :
- https://doi.org/10.1088/1361-6528/aa8b81