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Author’s Reply to “Comments on ‘A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs’”.
- Source :
- IEEE Electron Device Letters; Nov2017, Vol. 38 Issue 11, p1619-1620, 2p
- Publication Year :
- 2017
-
Abstract
- The authors would like to apologize for and correct a few errors about the references in our recently published paper (<xref ref-type="bibr" rid="ref1">[1]</xref> of this reply), and make some comments: <list list-type="ordered"><list-item><label>1)</label><p>References [26] (by T. Alfrey et al.) and [32] in our paper should be <xref ref-type="bibr" rid="ref2">[2]</xref> (by R. M. Fuoss et al.) and <xref ref-type="bibr" rid="ref3">[3]</xref> as listed in this reply, respectively.</p></list-item><list-item><label>2)</label><p>We would also like to recognize the work of Paolucci et al. (<xref ref-type="bibr" rid="ref4">[4]</xref> of this reply), in particular, their introduction of two transformation variables (Eq. (4)) to solve the nonlinear cylindrical 1-D Poisson’s Equation. We were not aware of their work at the time of our paper publication. Actually, the involved transformation variables/method were first reported by Fuoss et al. <xref ref-type="bibr" rid="ref2">[2]</xref>, hereinafter referred to as Fuoss’ transformation variables/method. On the other hand, it should be pointed out that before the paper by Paolucci et al. was submitted for consideration of publication, we had been aware of the work of Fuoss et al. The related early work of our corresponding author (Chen) dates back to 2001 (e.g., [37] in our paper). All the research reports of our students, including the cited thesis ([38] in our paper) of Jun Zhou (one of our authors), have been well documented in the database and library of our university. Jun Zhou’s first report on Fuoss’ transformation variables was submitted in November of 2014 (the evidence material has been submitted to the editor for a review). In his report, Jun Zhou used Fuoss’ transformation variables to prove that the cylindrical nonlinear Poisson’s equation can be transformed to the Cartesian form. His thesis proposal <xref ref-type="bibr" rid="ref5">[5]</xref> was submitted in November of 2015 for an approval from his advisor and the thesis committee. The thesis was completed and officially signed (and documented in our university library) in May of 2016.</p></list-item> </list> [ABSTRACT FROM AUTHOR]
- Subjects :
- METAL oxide semiconductor field-effect transistors
SEMICONDUCTOR devices
Subjects
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 38
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 125895675
- Full Text :
- https://doi.org/10.1109/LED.2017.2757483