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Relaxation-Free and Inertial Switching in Synthetic Antiferromagnets Subject to Super-Resonant Excitation.
- Source :
- IEEE Transactions on Magnetics; Nov2017, Vol. 53 Issue 11, p1-5, 5p
- Publication Year :
- 2017
-
Abstract
- Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. In this paper, we propose a method for how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane picosecond-range magnetic-field pulses. Our detailed micromagnetic simulations, supported by analytical results, yield the parameter space where inertial switching and relaxation-free switching can be achieved in the system. We furthermore discuss the advantages of dynamic switching in synthetic antiferromagnets and, specifically, their relatively low-power switching as compared with that in single ferromagnetic particles. Finally, we show how the excitation of spin waves in the system can be used to significantly reduce the post-switching spin oscillations for practical device geometries. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189464
- Volume :
- 53
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Magnetics
- Publication Type :
- Academic Journal
- Accession number :
- 125953978
- Full Text :
- https://doi.org/10.1109/TMAG.2017.2707589