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Carrier dynamics of InAs quantum dots with GaAs1-xSbx barrier layers.
- Source :
- Applied Physics Letters; 11/6/2017, Vol. 111 Issue 19, p191105-1-191105-5, 5p, 4 Graphs
- Publication Year :
- 2017
-
Abstract
- Photoluminescence properties of InAs/GaAs<subscript>1-x</subscript>Sb<subscript>x</subscript> quantum dots (QDs) are investigated with respect to the Sb-composition of x=0, 0.15, and 0.25. The QDs demonstrate a type-II band alignment for x=0.15 and 0.25. In contrast, with well-defined InAs/GaAs QDs, the InAs/GaAs<subscript>1-x</subscript>Sb<subscript>x</subscript> QDs exhibit overlapping spectral features with increasing laser excitation intensity, which are determined to be the result of different carrier recombination routes, including both type-I and type-II pathways. Our investigation indicates that the optical behavior and the carrier dynamics in these InAs/GaAs<subscript>1-x</subscript>Sb<subscript>x</subscript> QDs are much more complicated than in the InAs/GaAs QD counterparts. It provides very useful information for understanding the band structure and carrier dynamics of type-II InAs/GaAs<subscript>1-x</subscript>Sb<subscript>x</subscript> QDs. [ABSTRACT FROM AUTHOR]
- Subjects :
- INDIUM arsenide
QUANTUM dots
QUANTUM electronics
ANTIMONY
GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 111
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 126182199
- Full Text :
- https://doi.org/10.1063/1.5003097