Back to Search Start Over

Microwave exposure as a fast and cost-effective alternative of oxygen plasma treatment of indium-tin oxide electrode for application in organic solar cells.

Authors :
Anastasia Soultati
Ioannis Kostis
Giorgos Papadimitropoulos
Angelos Zeniou
Evangelos Gogolides
Dimitris Alexandropoulos
Nikos Vainos
Dimitris Davazoglou
Thanassis Speliotis
Nikolaos A Stathopoulos
Panagiotis Argitis
Maria Vasilopoulou
Source :
Journal of Physics D: Applied Physics; 12/20/2017, Vol. 50 Issue 50, p1-1, 1p
Publication Year :
2017

Abstract

Pre-treatment methods are commonly employed to clean as well as to modify electrode surfaces. Many previous reports suggest that modifying the surface properties of indium tin oxide (ITO) by oxygen plasma treatment is a crucial step for the fabrication of high performance organic solar cells. In this work, we propose a fast and cost-effective microwave exposure step for the modification of the surface properties of ITO anode electrodes used in organic solar cells. It is demonstrated that a short microwave exposure improves the hydrophilicity and reduces the roughness of the ITO surface, as revealed by contact angle and atomic force microscopy (AFM) measurements, respectively, leading to a better quality of the PEDOT:PSS film coated on top of it. Similar results were obtained with the commonly used oxygen plasma treatment of ITO suggesting that microwave exposure is an effective process for modifying the surface properties of ITO with the benefits of low-cost, easy and fast processing. In addition, the influence of the microwave exposure of ITO anode electrode on the performance of an organic solar cell based on the poly(3-hexylthiophene):[6,6]-phenyl C<subscript>70</subscript> butyric acid methyl ester (P3HT:PC<subscript>70</subscript>BM) blend is investigated. The 71% efficiency enhancement obtained in the microwave annealed-ITO based device as compared to the device with the as-received ITO was mainly attributed to the improvement in the short circuit current (J<subscript>sc</subscript>) and decreased leakage current caused by the reduced series and the increased shunt resistances and also by the higher charge generation efficiency, and the reduced recombination losses. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00223727
Volume :
50
Issue :
50
Database :
Complementary Index
Journal :
Journal of Physics D: Applied Physics
Publication Type :
Academic Journal
Accession number :
126463902
Full Text :
https://doi.org/10.1088/1361-6463/aa946c