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A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory.
- Source :
- IEEE Transactions on Information Forensics & Security; Feb2018, Vol. 13 Issue 2, p437-448, 12p
- Publication Year :
- 2018
-
Abstract
- Emerging non-volatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) exhibit a unique set of characteristics that make them promising candidates for the next generation of low-cost, low-power, tiny, and secure physical unclonable functions (PUFs). Their underlying stochastic ionic conduction behavior, intrinsic nonlinear current-voltage characteristics, and their well-known nano-fabrication process variability might normally be considered disadvantageous ReRAM features. However, using a combination of a novel architecture and special peripheral circuitry, this paper exploits these non-idealities in a physical one-way function, nonlinear resistive PUF, potentially applicable to a variety of cyber-physical security applications. We experimentally verify the performance of valency change mechanism (VCM)-based ReRAM in nano-fabricated crossbar arrays across multiple dies and runs. In addition to supporting a massive pool of challenge-response pairs (CRPs), using a combination of experiment and simulation our proposed PUF exhibits a reliability of 98.67%, a uniqueness of 49.85%, a diffuseness of 49.86%, a uniformity of 47.28%, and a bit-aliasing of 47.48%. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 15566013
- Volume :
- 13
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Information Forensics & Security
- Publication Type :
- Academic Journal
- Accession number :
- 126527243
- Full Text :
- https://doi.org/10.1109/TIFS.2017.2756562