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Tuning electronic properties of the S2/graphene heterojunction by strains from density functional theory.
- Source :
- Chinese Physics B; Dec2017, Vol. 26 Issue 12, p1-1, 1p
- Publication Year :
- 2017
-
Abstract
- Based on the density functional calculations, the structural and electronic properties of the WS<subscript>2</subscript>/graphene heterojunction under different strains are investigated. The calculated results show that unlike the free mono-layer WS<subscript>2</subscript>, the monolayer WS<subscript>2</subscript> in the equilibrium WS<subscript>2</subscript>/graphene heterojunctionis characterized by indirect band gap due to the weak van der Waals interaction. The height of the schottky barrier for the WS<subscript>2</subscript>/graphene heterojunction is 0.13 eV, which is lower than the conventional metal/MoS<subscript>2</subscript> contact. Moreover, the band properties and height of schottky barrier for WS<subscript>2</subscript>/graphene heterojunction can be tuned by strain. It is found that the height of the schottky barrier can be tuned to be near zero under an in-plane compressive strain, and the band gap of the WS<subscript>2</subscript> in the heterojunction is turned into a direct band gap from the indirect band gap with the increasing schottky barrier height under an in-plane tensile strain. Our calculation results may provide a potential guidance for designing and fabricating the WS<subscript>2</subscript>-based field effect transistors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 26
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 126584221
- Full Text :
- https://doi.org/10.1088/1674-1056/26/12/127101