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Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric.
- Source :
- Applied Physics Letters; 1/15/2018, Vol. 112 Issue 2, p1-N.PAG, 4p
- Publication Year :
- 2018
-
Abstract
- An ultrathin, 5 nm, Al<superscript />O<superscript /> film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al<superscript />O<superscript /> layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6V. In particular, a very high gate capacitance of 7<superscript />0 nF/cm<superscript /> was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2χ10<superscript>7</superscript>. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3χ10<superscript>6</superscript>.The electron transport through the Al<superscript>2</superscript>O<superscript>3</superscript> layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism. [ABSTRACT FROM AUTHOR]
- Subjects :
- LOW voltage systems
ATOMIC layer deposition
THIN films
DIELECTRICS
TRANSISTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 112
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 127362877
- Full Text :
- https://doi.org/10.1063/1.5003662