A capacitive multi-threshold threshold gate design to reach a high-performance PVT-tolerant 4:2 compressor by carbon nanotube FETs.

MLA

Maleknejad, Mojtaba, et al. “A Capacitive Multi-Threshold Threshold Gate Design to Reach a High-Performance PVT-Tolerant 4:2 Compressor by Carbon Nanotube FETs.” Analog Integrated Circuits & Signal Processing, vol. 94, no. 2, Feb. 2018, pp. 233–46. EBSCOhost, https://doi.org/10.1007/s10470-017-1077-1.

APA

Maleknejad, M., Faghih Mirzaee, R., Navi, K., & Naji, H. (2018). A capacitive multi-threshold threshold gate design to reach a high-performance PVT-tolerant 4:2 compressor by carbon nanotube FETs. Analog Integrated Circuits & Signal Processing, 94(2), 233–246. https://doi.org/10.1007/s10470-017-1077-1

Chicago

Maleknejad, Mojtaba, Reza Faghih Mirzaee, Keivan Navi, and Hamid Naji. 2018. “A Capacitive Multi-Threshold Threshold Gate Design to Reach a High-Performance PVT-Tolerant 4:2 Compressor by Carbon Nanotube FETs.” Analog Integrated Circuits & Signal Processing 94 (2): 233–46. doi:10.1007/s10470-017-1077-1.