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Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate.
- Source :
- Advanced Materials Interfaces; 1/15/2018, Vol. 5 Issue 2, p1-1, 8p
- Publication Year :
- 2018
-
Abstract
- Abstract: Due to its physical properties gallium‐nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high‐power and high‐frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based devices would be highly desirable. The integration of ferroelectric materials such as lead–zirconate–titanate (PbZr<italic><subscript>x</subscript></italic>Ti<subscript>1‐</subscript><italic><subscript>x</subscript></italic>O<subscript>3</subscript>) with GaN has a strong potential to offer such an improvement. However, the large lattice mismatch between PZT and GaN makes the epitaxial growth of Pb(Zr<subscript>1‐</subscript><italic><subscript>x</subscript></italic>Ti<italic><subscript>x</subscript></italic>)O<subscript>3</subscript> on GaN a formidable challenge. This work discusses a novel strain relaxation mechanism observed when MgO is used as a buffer layer, with thicknesses down to a single unit cell, inducing epitaxial growth of high crystallinity Pb(Zr<subscript>0.52</subscript>Ti<subscript>0.48</subscript>)O<subscript>3</subscript> (PZT) thin films. The epitaxial PZT films exhibit good ferroelectric properties, showing great promise for future GaN device applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- EPITAXY
CRYSTALLINITY
FERROELECTRICITY
LEAD zirconate titanate
GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 21967350
- Volume :
- 5
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Advanced Materials Interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 127564245
- Full Text :
- https://doi.org/10.1002/admi.201700921