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The Potential of Phosphorene Nanoribbons as Channel Material for Ultrascaled Transistors.
- Source :
- IEEE Transactions on Electron Devices; Jan2018, Vol. 65 Issue 1, p290-294, 5p
- Publication Year :
- 2018
-
Abstract
- Transport properties of realistic phosphorene nanoribbons (PNRs) with edge defects are studied by using statistical atomistic quantum transport simulations. Regarding the impact of nanoribbon width downscaling and increasing of edge defect percentage, we show that PNRs exhibit qualitatively similar behavior of the ON- and OFF-state conductance, and of the ON–OFF conductance ratio as graphene nanoribbons (GNRs). However, we demonstrate that PNRs are superior to GNRs in terms of the absolute values of the conductance parameters, and that PNRs are much more immune to edge defects than their graphene counterparts. This paper identifies PNRs as a more promising channel material than GNRs for the extremely scaled postsilicon transistor technology. [ABSTRACT FROM PUBLISHER]
- Subjects :
- PHOSPHORENE
NANORIBBONS
ELECTRIC admittance
GRAPHENE
NANOELECTRONICS
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 127950488
- Full Text :
- https://doi.org/10.1109/TED.2017.2771345