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Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices.
- Source :
- IEEE Transactions on Electron Devices; Jan2018, Vol. 65 Issue 1, p207-214, 8p
- Publication Year :
- 2018
-
Abstract
- (Al)GaN recess-free normally OFF technology is developed for fabrication of high-yield lateral GaN-based power devices. The recess-free process is achieved by an ultrathin-barrier (UTB) AlGaN/GaN heterostructure that features a natural pinched-off 2-D electron gas channel. The top–down manufacturing technique overcomes the challenges in etching of AlGaN barrier with well-controlled depth and uniformity, which is especially attractive for fabrication of normally OFF GaN-based high-electron-mobility transistors (HEMTs) and metal–insulator–semiconductor HEMTs (MIS-HEMTs) on large-size Si substrate. With SiNx passivation grown by low-pressure chemical-vapor deposition, on-resistance of the UTB-AlGaN/GaN-based power devices can be significantly reduced. High-uniformity low-hysteresis normally OFF HEMTs and Al2O3/AlGaN/GaN MIS-HEMTs are successfully demonstrated on the UTB AlGaN/GaN-on-Si platform. It is also a compelling technology platform for manufacturing high-performance GaN-based lateral power diodes, and normally OFF p-(Al)GaN heterojunction field-effect transistors. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 127950499
- Full Text :
- https://doi.org/10.1109/TED.2017.2773201