Analytical Model for the Threshold Voltage of p -(Al)GaN High-Electron-Mobility Transistors.

MLA

Bakeroot, Benoit, et al. “Analytical Model for the Threshold Voltage of p -(Al)GaN High-Electron-Mobility Transistors.” IEEE Transactions on Electron Devices, vol. 65, no. 1, Jan. 2018, pp. 79–86. EBSCOhost, https://doi.org/10.1109/TED.2017.2773269.

APA

Bakeroot, B., Stockman, A., Posthuma, N., Stoffels, S., & Decoutere, S. (2018). Analytical Model for the Threshold Voltage of p -(Al)GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices, 65(1), 79–86. https://doi.org/10.1109/TED.2017.2773269

Chicago

Bakeroot, Benoit, Arno Stockman, Niels Posthuma, Steve Stoffels, and Stefaan Decoutere. 2018. “Analytical Model for the Threshold Voltage of p -(Al)GaN High-Electron-Mobility Transistors.” IEEE Transactions on Electron Devices 65 (1): 79–86. doi:10.1109/TED.2017.2773269.