Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices.

MLA

Bricalli, Alessandro, et al. “Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices.” IEEE Transactions on Electron Devices, vol. 65, no. 1, Jan. 2018, pp. 115–21. EBSCOhost, https://doi.org/10.1109/TED.2017.2777986.

APA

Bricalli, A., Ambrosi, E., Laudato, M., Maestro, M., Rodriguez, R., & Ielmini, D. (2018). Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices. IEEE Transactions on Electron Devices, 65(1), 115–121. https://doi.org/10.1109/TED.2017.2777986

Chicago

Bricalli, Alessandro, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, and Daniele Ielmini. 2018. “Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices.” IEEE Transactions on Electron Devices 65 (1): 115–21. doi:10.1109/TED.2017.2777986.