Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces.

MLA

Paisley, Elizabeth A., et al. “Nitride Surface Chemistry Influence on Band Offsets at Epitaxial Oxide/GaN Interfaces.” Applied Physics Letters, vol. 112, no. 9, Feb. 2018, p. 1. EBSCOhost, https://doi.org/10.1063/1.5013605.

APA

Paisley, E. A., Brumbach, M. T., Shelton, C. T., Allerman, A. A., Atcitty, S., Rost, C. M., Ohlhausen, J. A., Doyle, B. L., Sitar, Z., Maria, J.-P., & Ihlefeld, J. F. (2018). Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces. Applied Physics Letters, 112(9), 1. https://doi.org/10.1063/1.5013605

Chicago

Paisley, Elizabeth A., Michael T. Brumbach, Christopher T. Shelton, Andrew A. Allerman, Stanley Atcitty, Christina M. Rost, James A. Ohlhausen, et al. 2018. “Nitride Surface Chemistry Influence on Band Offsets at Epitaxial Oxide/GaN Interfaces.” Applied Physics Letters 112 (9): 1. doi:10.1063/1.5013605.