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La2/3Sr1/3VO3 Thin Films: A New p-Type Transparent Conducting Oxide with Very High Figure of Merit.

Authors :
Ling Hu
Renhuai Wei
Jian Yan
Dong Wang
Xianwu Tang
Xuan Luo
Wenhai Song
Jianmin Dai
Xuebin Zhu
Changjin Zhang
Yuping Sun
Source :
Advanced Electronic Materials; Mar2018, Vol. 4 Issue 3, p1-6, 6p
Publication Year :
2018

Abstract

Transparent conducting oxides (TCOs) are a unique series of materials combining electrical conductivity with optical transparency. Most of the commercially available TCOs are of the n-type. The performance of p-type TCOs, however, is far behind their n-type TCO counterparts primarily due to the doping bottleneck and low hole mobility. Herein, a Mott-Hubbard insulator of LaVO<subscript>3</subscript> is proposed as the starting point for exploring p-type TCOs. Substitution of La<superscript>3+</superscript> by Sr<superscript>2+</superscript> can introduce high hole carrier concentration at the top of the valence band to overcome the doping bottleneck. Combining a modest carrier mobility with weak absorption in the visible region, La<subscript>1-x</subscript>Sr<subscript>x</subscript>VO<subscript>3</subscript> compounds can serve as new p-type TCOs and exhibit good balance of the tradeoffs between electrical conductivity and optical transparency. It is demonstrated that La<subscript>2/3</subscript>Sr<subscript>1/3</subscript>VO<subscript>3</subscript> thin films exhibit a high conductivity of 742.3-872.3 S cm<superscript>-1</superscript> at room temperature and a high transmission of 53.9-70.1% in the visible region, which leads to the highest figure of merit among p-type TCOs so far. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2199160X
Volume :
4
Issue :
3
Database :
Complementary Index
Journal :
Advanced Electronic Materials
Publication Type :
Academic Journal
Accession number :
128508702
Full Text :
https://doi.org/10.1002/aelm.201700476