Modified Deal Grove model for the thermal oxidation of silicon carbide.

Authors :: Song, Y.
Dhar, S.
Feldman, L. C.
Chung, G.
Williams, J. R.
Source :: Journal of Applied Physics; 5/1/2004, Vol. 95 Issue 9, p4953-4957, 5p, 1 Diagram, 3 Charts, 6 Graphs
Publication Year :: 2004
Abstract: A modified Deal Grove model for the oxidation of 4H-SiC is presented, which includes the removal of the carbon species. The model is applied to data on the oxidation rates for the (0001) Si, (0001) C, and (1120) a faces, which are performed in 1 atm dry oxygen and in the temperature range 950–1150 °C. Analysis within the model provides a physical explanation for the large crystal-face dependent oxidation rates observed. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]