A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy.

MLA

Runze Han, et al. “A Novel Ternary Content Addressable Memory Design Based on Resistive Random Access Memory with High Intensity and Low Search Energy.” Japanese Journal of Applied Physics, vol. 57, no. 4S, Apr. 2018, p. 1. EBSCOhost, https://doi.org/10.7567/JJAP.57.04FE02.

APA

Runze Han, Wensheng Shen, Peng Huang, Zheng Zhou, Lifeng Liu, Xiaoyan Liu, & Jinfeng Kang. (2018). A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy. Japanese Journal of Applied Physics, 57(4S), 1. https://doi.org/10.7567/JJAP.57.04FE02

Chicago

Runze Han, Wensheng Shen, Peng Huang, Zheng Zhou, Lifeng Liu, Xiaoyan Liu, and Jinfeng Kang. 2018. “A Novel Ternary Content Addressable Memory Design Based on Resistive Random Access Memory with High Intensity and Low Search Energy.” Japanese Journal of Applied Physics 57 (4S): 1. doi:10.7567/JJAP.57.04FE02.