Back to Search
Start Over
A TIGBT With Floating n-Well Region for High dV/dt Controllability and Low EMI Noise.
- Source :
- IEEE Electron Device Letters; Apr2018, Vol. 39 Issue 4, p560-563, 4p
- Publication Year :
- 2018
-
Abstract
- A trench insulated gate bipolar transistor (TIGBT) with floating n-well (FN) region is proposed. In the off-state, the n-well region, which is pinched off by its adjacent trenches, would almost have no effect on the breakdown voltage. In the turn-on transient, only a few holes could be attracted into the FN region, because it has a high barrier to holes. So the increase of the potential of the FN region is prevented, which suppresses the reverse displacement current that charges the gate capacitance significantly. As a result, the proposed TIGBT shows excellent controllability on the turn-on dVCE/dt, and hence, the reverse-recovery dVKA/dt of free-wheeling diode (FWD). The simulation results based on 1.2-kV TIGBT show that, in comparison with the TIGBT with floating P-base, the lower limit of the reverse-recovery dVKA/dt of FWD can be reduced by 85.7%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 39
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 128664279
- Full Text :
- https://doi.org/10.1109/LED.2018.2803116