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Structural and magnetic characterization of Fe2CrSi Heusler alloy nanoparticles as spin injectors and spin based sensors.

Authors :
Saravanan, G.
Asvini, V.
Kalaiezhily, R. K.
Parveen, I. Mubeena
Ravichandran, K.
Shekhawat, Manoj Singh
Bhardwaj, Sudhir
Suthar, Bhuvneshwer
Source :
AIP Conference Proceedings; 2018, Vol. 1953 Issue 1, pN.PAG-N.PAG, 4p
Publication Year :
2018

Abstract

Half-metallic ferromagnetic [HMF] nanoparticles are of considerable interest in spintronics applications due to their potential use as a highly spin polarized current source. HMF exhibits a semiconductor in one spin band at the Fermi level E<subscript><italic>f</italic></subscript> and at the other spin band they poses strong metallic nature which shows 100 % spin polarization at E<subscript><italic>f</italic></subscript>. Fe based full Heusler alloys are primary interest due to high Curie temperature. Fe<subscript>2</subscript>CrSi Heusler alloys are synthesized using metallic powders of Fe, Cr and Si by mechanical alloying method. X-Ray diffractions studies were performed to analyze the structural details of Fe<subscript>2</subscript>CrSi nanoparticles with High resolution scanning electron microscope (HRSEM) studies for the morphological details of nanoparticles and magnetic properties were studied using Vibrating sample magnetometer (VSM). XRD Data analysis conforms the Heusler alloy phase showing the existence of L2<subscript>1</subscript> structure. Magnetic properties are measured for synthesized samples exhibiting a soft magnetic property possessing low coercivity (H<subscript>C</subscript> = 60.5 Oe) and saturation magnetic moment of Fe<subscript>2</subscript>CrSi is 3.16 µB, which is significantly higher than the ideal value of 2 µB from the Slater-Pauling rule due to room temperature measurement. The change in magnetic properties are half-metallic nature of Fe<subscript>2</subscript>CrSi is due to the shift of the Fermi level with respect to the gap were can be used as spin sensors and spin injectors in magnetic random access memories and other spin dependent devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0094243X
Volume :
1953
Issue :
1
Database :
Complementary Index
Journal :
AIP Conference Proceedings
Publication Type :
Conference
Accession number :
129585285
Full Text :
https://doi.org/10.1063/1.5033143