Study of the Impact of H+ Mobile Ions on RF Performances of PECVD TEOS Silicon Dioxide Deposited at Low Temperature.

Details

Language :

English

ISSN :

21628769

Volume :

5

Issue :

10

Database :

Complementary Index

Journal :

ECS Journal of Solid State Science & Technology

Publication Type :

Academic Journal

Accession number :

129617644

Full Text :

https://doi.org/10.1149/2.0301610jss