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Compression behavior and phase transition of β-Si3N4 under high pressure.

Authors :
Hong-xia Gong
Zi-li Kou
Cong Fan
Hao Liang
Qi-ming Wang
Lei-lei Zhang
Fang Peng
Ming Yang
Xiao-lin Ni
Jing Liu
Source :
Chinese Physics B; May2018, Vol. 27 Issue 5, p1-1, 1p
Publication Year :
2018

Abstract

The compressibility and pressure-induced phase transition of β-Si<subscript>3</subscript>N<subscript>4</subscript> were investigated by using an angle dispersive x-ray diffraction technique in a diamond anvil cell at room temperature. Rietveld refinements of the x-ray powder diffraction data verified that the hexagonal structure (with space group P63/m, Z = 2 formulas per unit cell) β-Si<subscript>3</subscript>N<subscript>4</subscript> remained stable under high pressure up to 37 GPa. Upon increasing pressure, β-Si<subscript>3</subscript>N<subscript>4</subscript> transformed to δ-Si<subscript>3</subscript>N<subscript>4</subscript> at about 41 GPa. The initial β-Si<subscript>3</subscript>N<subscript>4</subscript> was recovered as the pressure was released to ambient pressure, implying that the observed pressure-induced phase transformation was reversible. The pressure–volume data of β-Si<subscript>3</subscript>N<subscript>4</subscript> was fitted by the third-order Birch–Murnaghan equation of state, which yielded a bulk modulus K<subscript>0</subscript> = 273(2) GPa with its pressure derivative (fixed) and K<subscript>0</subscript> = 278(2) GPa with . Furthermore, the compressibility of the unit cell axes (a and c-axes) for the β-Si<subscript>3</subscript>N<subscript>4</subscript> demonstrated an anisotropic property with increasing pressure. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
16741056
Volume :
27
Issue :
5
Database :
Complementary Index
Journal :
Chinese Physics B
Publication Type :
Academic Journal
Accession number :
129688094
Full Text :
https://doi.org/10.1088/1674-1056/27/5/056101