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A 500 ?C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology.

Authors :
Hussain, Muhammad Waqar
Elahipanah, Hossein
Zumbro, John E.
Schroder, Stephan
Rodriguez, Saul
Malm, Bengt Gunnar
Mantooth, Homer Alan
Rusu, Ana
Source :
IEEE Electron Device Letters; Jun2018, Vol. 39 Issue 6, p855-858, 4p
Publication Year :
2018

Abstract

This letter presents an active down-conversion mixer for high-temperature communication receivers. The mixer is based on an in-house developed 4H-SiC BJT and down-converts a narrow-band RF input signal centered around 59 MHz to an intermediate frequency of 500 kHz. Measurements show that the mixer operates from room temperature up to 500 ?C. The conversion gain is 15 dB at 25 ?C, which decreases to 4.7 dB at 500 ?C. The input 1-dB compression point is 1 dBm at 25 ?C and ?2.5 dBm at 500 ?C. The mixer is biased with a collector current of 10 mA from a 20 V supply and has a maximum DC power consumption of 204 mW. High-temperature reliability evaluation of the mixer shows a conversion gain degradation of 1.4 dB after 3-hours of continuous operation at 500 ?C. [ABSTRACT FROM PUBLISHER]

Subjects

Subjects :
SILICON carbide
RADIO frequency

Details

Language :
English
ISSN :
07413106
Volume :
39
Issue :
6
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
129761680
Full Text :
https://doi.org/10.1109/LED.2018.2829628