Cite
Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification.
MLA
Mukunoki, Yasushige, et al. “Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification.” IEEE Transactions on Industry Applications, vol. 54, no. 3, May 2018, pp. 2588–97. EBSCOhost, https://doi.org/10.1109/TIA.2018.2796587.
APA
Mukunoki, Y., Horiguchi, T., Nishizawa, A., Nakamura, Y., Konno, K., Akagi, H., Nakayama, Y., & Kuzumoto, M. (2018). Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification. IEEE Transactions on Industry Applications, 54(3), 2588–2597. https://doi.org/10.1109/TIA.2018.2796587
Chicago
Mukunoki, Yasushige, Takeshi Horiguchi, Akinori Nishizawa, Yuta Nakamura, Kentaro Konno, Hirofumi Akagi, Yasushi Nakayama, and Masaki Kuzumoto. 2018. “Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification.” IEEE Transactions on Industry Applications 54 (3): 2588–97. doi:10.1109/TIA.2018.2796587.