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Electric-field-induced three-terminal pMTJ switching in the absence of an external magnetic field.
- Source :
- Applied Physics Letters; 6/18/2018, Vol. 112 Issue 25, pN.PAG-N.PAG, 4p, 1 Chart, 5 Graphs
- Publication Year :
- 2018
-
Abstract
- Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal perpendicular magnetic tunnel junction (pMTJ). By conducting macro-spin simulations, we show that a pMTJ with a thermal stability of 61 can be switched in 0.5 ns, consuming a switching energy of 6 fJ, and the voltage operation margin can be improved to 0.8 ns. Furthermore, the results also demonstrate that a heavy metal system that can provide a large field-like torque rather than the damping-like torque is favored for the switching. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 112
- Issue :
- 25
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 130304158
- Full Text :
- https://doi.org/10.1063/1.5027759