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Reverse-Blocking Normally-OFF GaN Double-Channel MOS-HEMT With Low Reverse Leakage Current and Low ON-State Resistance.
- Source :
- IEEE Electron Device Letters; Jul2018, Vol. 39 Issue 7, p1003-1006, 4p
- Publication Year :
- 2018
-
Abstract
- An MOS field plate-protected Schottky-drain (gated Schottky-drain) is successfully integrated on a double-channel AlGaN/GaN MOS-HEMT to provide reverse blocking capability. The leakage suppression MOS field plate is deployed on the etched upper GaN channel layer after a barrier fully recess process, leading to a low reverse OFF-state leakage current of −20 nA/mm (at −100 V). The drain metal is deployed adjacent to the MOS field plate, contacting the upper MOS-channel and lower heterojunction channel from the sidewall. A metal-2DEG Schottky contact with a low turn-ON voltage of 0.5 V is achieved. Since the lower channel (below the MOS field plate) is separated from the etched surface of upper GaN channel layer, a high-conductivity MOS-gated channel with a sheet resistance of 806 $\Omega$ /Square is obtained. The device exhibits a threshold voltage of +0.6 V (at $10~\mu \text{A}$ /mm and +1.9 V from linear extrapolation) and an ON-resistance of ~18 $\Omega {\cdot} \text {mm}$. Besides, a high forward (and reverse) breakdown voltage of 790 V (and −656 V, all at $10~\mu \text{A}$ /mm) is achieved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 39
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 130410507
- Full Text :
- https://doi.org/10.1109/LED.2018.2832180