Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells.

The design of the active region in InGaAsN quantum well (QW) injection lasers is investigated. Long-wavelength (1.27–1.3 mm), low-threshold (<400 A/cm²), and high-efficiency (>50%) lasing is obtained at room temperature from structures based on single InGaAsN QWs in GaAs or InGaAsN barrier layers. The principal parameters (threshold, temperature, power) of these lasers have been studied in the wide-stripe configuration. The characteristics of injection lasers with different designs of the active region are compared. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]