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Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode.
- Source :
- Applied Physics Letters; 7/23/2018, Vol. 113 Issue 4, pN.PAG-N.PAG, 4p, 1 Diagram, 3 Graphs
- Publication Year :
- 2018
-
Abstract
- Oxide-based binary resistive switching memories using metal nitride as one of the electrodes usually have a limited ratio of the resistances of the high- and low-resistance states. Here, we propose a competing mechanism to enhance the switching ratio by modifying the high-resistance state with extra inherent interfacial oxygen diffusion against what happens at the oxide/nitride interface. This is implemented in Pt/ZrO<subscript>2</subscript>/Ta<subscript>2</subscript>O<subscript>5</subscript>/TaN bilayer structures, where a resistance ratio above 10<superscript>4</superscript>, about one to two orders of magnitude greater than that in Pt/Ta<subscript>2</subscript>O<subscript>5</subscript>/TaN monolayer structures, is achieved. This competing mechanism is further corroborated by the failed enhancement in the switching ratio when using an altered stacking arrangement of the two oxide layers. [ABSTRACT FROM AUTHOR]
- Subjects :
- METAL nitrides
TANTALUM oxide
ELECTRODES
OXYGEN
INTERFACIAL resistance
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 113
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 130962711
- Full Text :
- https://doi.org/10.1063/1.5037840