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Erratum: "Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors" [J. Appl. Phys. 122, 095302 (2017)].
- Source :
- Journal of Applied Physics; 2018, Vol. 124 Issue 13, pN.PAG-N.PAG, 1p
- Publication Year :
- 2018
-
Abstract
- An erratum is presented to the article "Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors" which appeared in an earlier issue on October 3, 2018.
- Subjects :
- GALLIUM
MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 124
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 132184820
- Full Text :
- https://doi.org/10.1063/1.5051998