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Switching Voltage Analysis of Nanoelectromechanical Memory Switches for Monolithic 3-D CMOS-NEM Hybrid Reconfigurable Logic Circuits.
- Source :
- IEEE Transactions on Electron Devices; Sep2018, Vol. 65 Issue 9, p3780-3785, 6p
- Publication Year :
- 2018
-
Abstract
- The accurate calculation of switching voltage (${V}_{s}$) is necessary for the reliable and low-power operation of monolithic 3-D (M3D) CMOS-nanoelectromechanical (NEM) hybrid reconfigurable logic circuits because ${V}_{s}$ corresponds to the operating voltage (${V}_{\text {dd}}$) of NEM memory switches. In this paper, based on the Euler–Bernoulli equation, the physics-based analytical model is proposed to determine ${V}_{s}$. The accuracy of the proposed model is verified by both the finite-element analysis and experimental results. Our proposed model shows >3% error compared with experimental data. Also, the design guidelines of NEM memory switches are presented in terms of minimum ${V}_{s}$ (${V}_{s\_{}{m}}$) and device dimensions. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRIC potential measurement
COMPLEMENTARY metal oxide semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 132684456
- Full Text :
- https://doi.org/10.1109/TED.2018.2858775