Back to Search
Start Over
Analytical Modeling of Pinning Process in Pinned Photodiodes.
- Source :
- IEEE Transactions on Electron Devices; Oct2018, Vol. 65 Issue 10, p4362-4368, 7p
- Publication Year :
- 2018
-
Abstract
- In this paper, the pinning process of pinned photodiodes (PPDs) is described by a new analytical model, assuming the PPD to be composed of inner and junction regions. There are two definitions of the pinning potential: maximum conduction band potential variation ($\Delta \varphi _{M}$) and maximum electron quasi-fermi level potential variation ($\Delta $ FP $_{M}$). The output of the previous pinning potential models is only an approximation of $\Delta \varphi _{M}$. In this paper, a comprehensive model is proposed in which both aforementioned definitions of pinning potential can be achieved analytically. The proposed model is a system of equations relating PPD’s main characteristics such as $\Delta \varphi _{M}$ and equilibrium full-well capacity to other main PPD parameters such as PPD spatial dimensions, impurity dopant concentrations, maximum inner region potential, and remnant carrier population at $\Delta \varphi _{M}$. The proposed model is verified by two previously reported experiment-based data. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 132684517
- Full Text :
- https://doi.org/10.1109/TED.2018.2862251