Piecewise Linear Approximation for Extraction of JFET Resistance in SiC MOSFET.

This paper proposes an accurate modeling method to inspect the resistance of JFET region in a silicon carbide (SiC) MOSFET in which piecewise linear approximation of doping profile of the p-well is utilized to simplify the calculation process. With depletion width and scatter width both considered, the newly developed model could obtain the JFET resistance more accurately than the conventional models reported. Sentaurus TCAD simulations and experimental studies are performed to verify the accuracy of the proposed model method. Additional nitrogen implantations for the JFET region are also included to further demonstrate the accuracy of the model. The developed model could help analyze the percent of JFET resistance in the total device on-state resistance, thus providing a guideline for the optimization of SiC MOSFETs. [ABSTRACT FROM AUTHOR]