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A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs.
- Source :
- IEEE Transactions on Electron Devices; Oct2018, Vol. 65 Issue 10, p4271-4275, 5p
- Publication Year :
- 2018
-
Abstract
- This paper presents a comparison of switching performances between the in-situ oxide, gallium nitride (GaN) interlayer FET (OG-FET) and the conventional GaN metal–oxide–semiconductor FET (MOSFET), and explores the influence of the channel electron mobility on the device switching performance. GaN OG-FET is a novel structure with a pristine GaN layer grown between the gate oxide and the p-GaN enhancing the channel mobility up to 185 cm2/ $\text {V}\cdot \text {s}$ , which is over $3{\times}$ larger than that of the typical reported value (50 cm2/ $\text {V}\cdot \text {s}$) in GaN MOSFET. Owing to the high channel electron mobility, the GaN OG-FET showed a switching loss 30% lower than that of the conventional GaN trench MOSFET. Our results indicate that GaN OG-FET has the potential to attain greater efficiency, particularly at higher frequencies, showing a possible patch toward megahertz range conversions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 132684537
- Full Text :
- https://doi.org/10.1109/TED.2018.2864260