New Reentrant Insulating Phases in Strongly Interacting 2D Systems with Low Disorder.

Featured Application: high mobility transistors. The metal-insulator transition (MIT) in two-dimension (2D) was discovered by Kravchenko et al. more than two decades ago in strongly interacting 2D electrons residing in a Si-metal-oxide-semiconductor field-effect transistor (Si-MOSFET). Its origin remains unresolved. Recently, low magnetic field reentrant insulating phases (RIPs), which dwell between the zero-field (B = 0) metallic state and the integer quantum Hall (QH) states where the Landau-level filling factor υ > 1, have been observed in strongly correlated 2D GaAs hole systems with a large interaction parameter, r_s, (~20–40) and a high purity. A new complex phase diagram was proposed, which includes zero-field MIT, low magnetic field RIPs, integer QH states, fractional QH states, high field RIPs and insulating phases (HFIPs) with υ < 1 in which the insulating phases are explained by the formation of a Wigner crystal. Furthermore, evidence of new intermediate phases was reported. This review article serves the purpose of summarizing those recent experimental findings and theoretical endeavors to foster future research efforts. [ABSTRACT FROM AUTHOR]