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High Mobilities in Layered InSe Transistors with Indium‐Encapsulation‐Induced Surface Charge Doping.
- Source :
- Advanced Materials; 11/2/2018, Vol. 30 Issue 44, pN.PAG-N.PAG, 1p
- Publication Year :
- 2018
Details
- Language :
- English
- ISSN :
- 09359648
- Volume :
- 30
- Issue :
- 44
- Database :
- Complementary Index
- Journal :
- Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- 132852336
- Full Text :
- https://doi.org/10.1002/adma.201803690