Cite
Resistive Switching Memory: Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018).
MLA
Raeis, Hosseini, Niloufar, et al. “Resistive Switching Memory: Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory Using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018).” Advanced Electronic Materials, vol. 4, no. 11, Nov. 2018, p. N.PAG. EBSCOhost, https://doi.org/10.1002/aelm.201870052.
APA
Raeis, H. N., Lim, S., Hwang, H., & Rho, J. (2018). Resistive Switching Memory: Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018). Advanced Electronic Materials, 4(11), N.PAG. https://doi.org/10.1002/aelm.201870052
Chicago
Raeis, Hosseini, Niloufar, Seokjae Lim, Hyunsang Hwang, and Junsuk Rho. 2018. “Resistive Switching Memory: Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory Using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018).” Advanced Electronic Materials 4 (11): N.PAG. doi:10.1002/aelm.201870052.