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Modeling and Evaluation of Sub-10-nm Shape Perpendicular Magnetic Anisotropy Magnetic Tunnel Junctions.
- Source :
- IEEE Transactions on Electron Devices; Dec2018, Vol. 65 Issue 12, p5537-5544, 8p
- Publication Year :
- 2018
-
Abstract
- Magnetic tunnel junctions (MTJs) with low switching current, high thermal stability, and small device size are strongly preferred for low-power, high-reliability, and high-density spintronic memory and logic applications. The research of MTJs from shape in-plane magnetic anisotropy to interfacial perpendicular magnetic anisotropy (i-PMA) has successfully paved the way down to 20-nm scale, below which, however, the i-PMA approach reaches a physical limit in sustaining sufficient thermal stability while achieving low-power spin transfer torque switching. Recently, studies have been reported a new approach to pave the way toward sub-10-nm MTJs satisfying the requirements by revisiting shape perpendicular magnetic anisotropy (s-PMA). In this paper, we present a compact model of the sub-10-nm s-PMA MTJ device, which captures both the static and dynamic physical behaviors. This model is SPICE-compatible for hybrid MTJ/CMOS circuit designs. This paper is expected to push forward the development of sub-10-nm-scale MTJ-based spintronic memory and logic circuits. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 133667824
- Full Text :
- https://doi.org/10.1109/TED.2018.2877938