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Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices.
- Source :
- IEEE Transactions on Electron Devices; Dec2018, Vol. 65 Issue 12, p5390-5394, 5p
- Publication Year :
- 2018
-
Abstract
- An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO2-based RRAM devices by inserting a thin TiO2 interface layer between electrodes and ZrO2 resistive switching layer were investigated. Compared with the Cu/ZrO2/Pt and Cu/ZrO2/TiO2/Pt devices, the Cu/TiO2/ZrO2/Pt and Cu/TiO2/ZrO2/TiO2/Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO2 interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance. [ABSTRACT FROM AUTHOR]
- Subjects :
- NONVOLATILE random-access memory
ANODES
THIN films
ELECTRODES
RANDOM access memory
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 65
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 133667825
- Full Text :
- https://doi.org/10.1109/TED.2018.2876942