Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures.

The long-lived interlayer excitons in van der Waals heterostructures based on transition-metal dichalcogenides, together with unique spin-valley physics, make them promising for next-generation photonic and valleytronic devices. Although the emission characteristics of interlayer excitons have been studied, efficient manipulation of their valley states, a necessary requirement for information encoding, is still lacking. Here, we demonstrate comprehensive electrical control of interlayer excitons in a MoSe₂/WSe₂ heterostructure. Encapsulation of our well-aligned stack with hexagonal boron nitride (h-BN) allows us to resolve two separate narrow interlayer transitions with opposite helicities under circularly polarized excitation, either preserving or reversing the polarization of incoming light. By electrically controlling their relative intensities, we realize a polarization switch with tunable emission intensity and wavelength. Finally, we observe large g-factors of these two transitions on application of an external magnetic field. These results are interpreted within the picture of moiré-induced brightening of forbidden optical transitions. The ability to control the polarization of interlayer excitons is a step towards the manipulation of the valley degree of freedom in realistic device applications. A device capable of inverting the polarization of light by efficient control of interlayer excitons in a van der Waals heterostructure is demonstrated, representing an important step towards implementing logic operations in valleytronics. [ABSTRACT FROM AUTHOR]