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Enhanced Magnetic Properties in Ar+-Ion Beam-Bombarded MnBi Thin Films.

Authors :: Li, X.
Wu, C.-H.
Lee, Y.-J.
Huang, Y.-L.
Huang, C.-L.
Tsai, J.-L.
Wu, T.-H.
Chen, T.
van Lierop, J.
Lin, K.-W.
Source :: Journal of Electronic Materials; Mar2019, Vol. 48 Issue 3, p1416-1420, 5p, 1 Color Photograph, 2 Graphs
Publication Year :: 2019
Abstract: MnBi is a promising ferromagnetic material for applications at elevated temperatures due to its high Curie temperature, sizable magnetocrystalline anisotropy, and increasing coercivity with temperature. However, fabrication of MnBi thin films with ferromagnetic low-temperature phase (LTP) is conventionally difficult due to the peritectic Mn-Bi reaction and Mn oxidization. In this work, in situ Ar<superscript>+</superscript>-ion beam bombardment was introduced to modify the microstructure and magnetic properties of (Mn/Bi)<subscript>n</subscript> superlattice. Structural characterization revealed formation of MnBi LTP in the as-deposited ion-beam-bombarded samples. Vacuum annealing further promoted growth of MnBi LTP grains with c-axis orientation, leading to remarkably improved perpendicular magnetic anisotropy. Ion-beam bombardment resulted in a 200% increase in the saturation magnetization of the annealed MnBi thin film. This advancement is attributed to the enhanced interdiffusion and reaction of Mn and Bi in the ion-beam-bombarded thin films. A stability test after 150 days in air revealed a remarkable reduction in ferromagnetism due to MnBi decomposition. This work provides an effective approach for fabrication of high-quality MnBi thin films. [ABSTRACT FROM AUTHOR]